Comparison ledger
Oxford Instruments 100 ICP Fluorine, Oxford Instruments 800 Plus RIE, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100 ICP FluorineOxford Instruments | 800 Plus RIEOxford Instruments |
|---|---|---|
| OEM | Oxford Instruments | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Oxford Instruments 100 ICP Fluorine | Oxford Instruments Plasmalab 800 |
| Specifications | ||
| Etch Gases | SF6, CF4, O2, Ar, N2, CHF3, C4F8[1] | — |
| Cryo DRIE etch rate | up to 5 µm/min[1] | — |
| Wafer size | 4 inch, 6 inch, 8 inch (with clamp change)[1] | 5 inch[2] |
| Configuration | — | may have missing parts[2] |
| Process type | — | Reactive I on Etching (RIE)[3] |
| Control system | — | PC controller[3] |
| Footprint | — | All electronics and vacuum components located within tool body to minimize footprint[3] |
| RF supply | — | Advanced Energy RFX 600A[3] |
| Tur bpump | — | Leybold TMP-361C[3] |
| Tur bpump controller | — | Leybold Harris Turbotronik NT20[3] |
| Vacuum pump | — | Busch Cobra BA100[3] |
| Elecrical supply | — | 208 VAC, 3 Phase[4] |
| Included subsystems | — | Process chamber, gas-delivery and control enclosure, cooling and shutter controls, pumping/control computer[4] |
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