Comparison ledger
Nikon NSR S 205 C, SUSS MicroTec 150 e Mask, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | NSR S 205 CNikon | 150 e MaskSUSS MicroTec |
|---|---|---|
| OEM | Nikon | SUSS MicroTec |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Nikon NSR | SUSS MicroTec 150 e Mask |
| Specifications | ||
| Configuration | 248nm (KrF)[1] | — |
| Type | Scanner[1] | — |
| Wavelength | 248 nm (KrF)[1] | — |
| Numerical Aperture | 0.75[2] | — |
| Minimum Feature Size | 0.13 µm[2] | — |
| Overlay Accuracy | < 30 nm[2] | — |
| Throughput (200 mm) | 140-200 wafers per hour[2] | — |
| Throughput (300 mm) | 84 wafers per hour[2] | — |
| Exposure Field | 25 mm × 33 mm[2] | — |
| Reduction Ratio | 4:1[2] | — |
| Wafer Sizes Supported | 200 mm and 300 mm (field-upgradable)[2] | — |
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