Comparison ledger
memsstar Orbis Alpha, Oxford Instruments plasmapro-ngp80-rie, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Orbis Alphamemsstar | plasmapro-ngp80-rieOxford Instruments |
|---|---|---|
| OEM | memsstar | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | 200mm | 200mm |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | memsstar Orbis Alpha | Oxford Instruments plasmapro-ngp80-rie |
| Specifications | ||
| System type | oxide etch system[1] | — |
| Process chemistry | hydrogen fluoride etchants[1] | — |
| Footprint | small footprint[1] | — |
| Dimensions | 600 x 540 x 900 mm[1] | — |
| Control | PC controlled[1] | — |
| User interface | resistive touch screen[1] | — |
| Selectivity to silicon nitride and silicon dioxide | < 5% 1σ[1] | — |
| Uniformity | < 5% 1σ[1] | — |
| Repeatability | < 5% 1σ[1] | — |
| Endpoint capability | unique endpoint capability[1] | — |
| Substrate size range | sample sizes to 200 mm[1] | — |
| Selectivity (silicon nitride and silicon dioxide) | excellent (<5% 1σ)[1] | — |
| Uniformity and repeatability | <5% 1σ[1] | — |
| Control interface | PC controlled with resistive touch screen[1] | — |
| Endpoint detection | unique endpoint capability[1] | — |
| Process window | large process window to optimize process for any structure[1] | — |
| Equipment name | — | Oxford NGP80 RIE[2] |
| Tag/alias | — | Oxford-PlasmaPro-NGP80-RIE[2] |
| Process type | — | plasma etch[2] |
| Etch chemistry | — | CHF3/Ar plasma[3] |
| Process temperature | — | 20°C[3] |
| Typical application | — | Etching of SiO2 hard mask[3] |
| plasma chemistry | — | CHF3/Ar plasma[3] |
| use | — | Etching SiO2 hard mask[3] |
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