Comparison ledger
Lam Research SEZ SP 203 Spin, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | SEZ SP 203 SpinLam Research | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Lam Research | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Lam Research SEZ SP 203 | Oxford Instruments 100 ICP Fluorine |
| Specifications | ||
| Configuration | 50/60 Hz[1] | — |
| Voltage | 400 VAC[1] | — |
| Max. Current | 32 A[1] | — |
| Breaking Capacity | 10.000 AIC[1] | — |
| Power | 400V, 50 Hz, 3-Phase[2] | — |
| Phase | ENI VL-400 Phase Shift Controller[2] | — |
| Roughing Pump Code | A532-80-905[2] | — |
| OEM | Lam Research[3] | — |
| Model | SEZ SP 203 Spin[1] | — |
| Category | Etch[3] | — |
| Tool type | Spin etcher[3] | — |
| Wafer size | 150mm[4] | 4 inch, 6 inch, 8 inch (with clamp change)[5] |
| Vintage | 1999[4] | — |
| Process pump status | Process pump in one chemical cabinet (sub tool) has malfunction[1] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[5] |
| Cryo DRIE etch rate | — | up to 5 µm/min[5] |
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