Waferpedia

Comparison ledger

716 A 13731 300 ESC Assyversus100 ICP Fluorine

Lam Research 716 A 13731 300 ESC Assy, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
100 ICP FluorineOxford Instruments
OEMLam ResearchOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyLam Research 716 A 13731 300 ESC AssyOxford Instruments 100 ICP Fluorine
Specifications
ConfigurationInner, SI[1]—
Etch Gases—SF6, CF4, O2, Ar, N2, CHF3, C4F8[3]
Cryo DRIE etch rate—up to 5 µm/min[3]
Wafer size—4 inch, 6 inch, 8 inch (with clamp change)[3]

Plan your fab

Building a Etch process? Get a complete equipment list.

Open the fab equipment planner →
Sources (3)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]inventory listing
  3. [3]nanofab.utah.edunanofab.utah.edu