Comparison ledger
KLA 1.112 PSL Wafer, Zeiss Orion NanoFab, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Orion NanoFabZeiss | |
|---|---|---|
| OEM | KLA | Zeiss |
| Category | Metrology & Inspection | Metrology & Inspection |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | KLA 1.112 PSL Wafer | Zeiss Orion NanoFab |
| Specifications | ||
| Configuration | NIST Traceable[1] | — |
| Wafer Size | 8 inch[1] | — |
| NIST Traceable | True[1] | — |
| Compatible Tools | Surfscan 6xy0 and Sp1[2] | — |
| Instrument type | — | Focused ion beam (FIB) microscope[3] |
| Functions | — | Ultrahigh-resolution imaging, direct writing, and lithography platform[3] |
| Beam species | — | Operates with either He or Ne[3] |
| He beam probe | — | ~0.5 nm[3] |
| He beam imaging performance | — | Produces sub-5 nm resolution images and patterns with large depth of field[3] |
| Ne beam application range | — | Direct write and lithography applications between 10 and 100 nm[3] |
| Sample capability | — | Non-conductive samples can be imaged with the aid of an electron flood gun[3] |
| Beam types | — | Helium (He) and Neon (Ne)[3] |
| Helium probe size | — | ~0.5 nm[3] |
| Helium resolution | — | sub-5 nm[3] |
| Neon direct write and lithography range | — | 10 to 100 nm[3] |
| Electron flood gun | — | For imaging non-conductive samples[3] |
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