Comparison ledger
JEOL JSM-7500F, KLA .498 PSL Wafer, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | JSM-7500FJEOL | |
|---|---|---|
| OEM | JEOL | KLA |
| Category | Metrology & Inspection | Metrology & Inspection |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | JEOL JSM-7500F | KLA .498 PSL Wafer |
| Specifications | ||
| Instrument type | Scanning Electron Microscope (SEM)[1] | — |
| Model designation | JEOL 7500F HRSEM[1] | — |
| Resolution at 30 kV | 0.8 nm[1] | — |
| Resolution at 1 kV | 1 nm[1] | — |
| Detectors | Secondary electron, backscattered electron, and scanning-transmission electron detectors[1] | — |
| Imaging mode | Gentle-beam mode via stage biasing system[1] | — |
| Chemical characterization | EDAX Energy Dispersive x-ray spectrometer (EDS) available for spectra or element maps[1] | — |
| Gentle beam mode | Stage biasing system reduces electron beam energy for imaging soft or insulating samples without coating[1] | — |
| EDS | EDAX Energy Dispersive x-ray spectrometer available[1] | — |
| Electron Source | field emission electron gun (field emission SEM)[2] | — |
| Lens Type | semi-in-lens type objective lens[2] | — |
| Unique Feature | Gentle Beam (GB mode) for top-surface imaging with ultra-low energy incident electrons[3] | — |
| Application | high-resolution imaging of large specimens; suitable for observing shallow surfaces of samples[2] | — |
| Electron Gun Type | Field emission[2] | — |
| Objective Lens Type | Semi-in-lens[2] | — |
| Beam Mode | Gentle Beam (GB)[2] | — |
| Low Voltage Capability | Down to several hundred eV[2] | — |
| Resolution Quality | Extremely high (stated)[2] | — |
| Application Focus | Observation of shallow surfaces[2] | — |
| Configuration | — | NIST Traceable[4] |
| NIST traceability | — | Yes[4] |
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