Waferpedia

Comparison ledger

1305 BSG 3versusG1000

Hitachi 1305 BSG 3, YES G1000, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
1305 BSG 3Hitachi
OEMHitachiYES
CategoryWet Processing / CleanWet Processing / Clean
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyHitachi 1305 BSG 3YES G1000
Specifications
Plasma frequency—40 kHz[1]
Powered shelves—4 powered shelves[1]
Plasma modes—5 plasma modes: Electron free / Downstream mode, Active mode, RIE mode, Active Ion trap, Downstream Ion trap[1]
Chamber—1/2" 6061-T6 aluminum chamber[1]
Process area per tray—15.13" W x 15.39" D[1]
Matching—Variable Frequency Matching (VFM)[1]
Interface—Touch Screen Interface[1]
Design—Unique downstream protective design; totally charge-free plasma[1]
Control—State logic control of output with input monitoring[1]
Number of powered shelves—4[1]
Chamber material—1/2" 6061-T6 aluminum[1]
Variable Frequency Matching (VFM)—Present[1]
Touch screen interface—Present[1]
Downstream protective design—Totally charge-free plasma[1]

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Sources (1)Every fact above is drawn from these public sources
  1. [1]pnf.uchicago.edupnf.uchicago.edu