Comparison ledger
EV Group 501 Wafer, EV Group 520, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 501 WaferEV Group | 520EV Group |
|---|---|---|
| OEM | EV Group | EV Group |
| Category | Packaging & Bonding | Packaging & Bonding |
| Wafer size | Manual wafer load substrate bonder | Manual wafer load substrate bonder |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | EV Group 501 Wafer | EV Group 520 |
| Cited variants | — |
|
| Specifications | ||
| Wafer size | Manual wafer load substrate bonder[2] | Manual wafer load substrate bonder[4] |
| Configuration | Capable of fusion compression bonding[2] | Refurbished[4] |
| Max Bond Force | 7 kN[2] | 7 kN[4] |
| Top side heater | 550°C max. in 1°C steps[2] | — |
| Bottom side heater | 550°C max. in 1°C steps[2] | — |
| Temperature uniformity | ± 1,5 %[2] | ± 1,5 %[4] |
| Wafer sizes | 2, 3, 4, 5, 6 inch (up to 150 mm)[2] | — |
| Substrate size | single chips to 200 mm[3] | — |
| Max bond force | 7 kN (source 1) or up to 20 kN (source 2)[2] | — |
| Top side heater max temperature | 550°C in 1°C steps (source 1)[2] | 550°C max. in 1°C steps[4] |
| Bottom side heater max temperature | 550°C in 1°C steps (source 1)[2] | 550°C max. in 1°C steps[4] |
| Maximum temperature (source 2) | up to 450°C[3] | — |
| Vacuum (standard) | 1x10-1 mbar[3] | — |
| Vacuum (optional) | 1x10-5 mbar[3] | — |
| Power supply for anodic bonding | 0-2000 V, 0-50 mA[3] | — |
| Footprint | 0.8 m2[3] | — |
| Conversion time | less than 5 minutes[3] | — |
| Control software | Windows-based[2] | Windows based control software and operation interface[4] |
| Phase | — | 3 Phase[4] |
| Wafer Size | — | up to 150 mm capable[4] |
| Vacuum Chuck | — | 6"/150mm diameter chuck[4] |
| Top Side Heater | — | 550°C max. in 1°C steps[4] |
| Bottom Side Heater | — | 550°C max. in 1°C steps[4] |
| OEM | — | EV Group[4] |
| Model | — | 520[4] |
| Load type | — | Manual wafer load substrate bonder[4] |
| Wafer size (as configured) | — | 6 inch[4] |
| Wafer size capability | — | up to 150 mm capable[4] |
| Max bond force (configured system) | — | 7 kN[4] |
| Power requirements | — | 50 / 60 Hz - 120 / 208 V - 3 Phase[4] |
| Bonding capability (configured system) | — | Fusion & thermal compression bonding; anodic bonding[4] |
| Bond chamber | — | High-vacuum capable bond chamber[4] |
| Bond tool cover | — | Auto opening of bond tool cover[4] |
| Chiller | — | Thermoflex 1400 Chiller (or equivalent)[4] |
| Pumping | — | Turbo pump and controller; roughing pump[4] |
| System configuration (EVG520 IS) | — | Single or dual chamber wafer bonding system[1] |
| Automation (EVG520 IS) | — | Fully automated processing with manual loading and unloading including external cooling station[1] |
| Aligner compatibility (EVG520 IS) | — | Compatible with EVG mechanical and optical aligners[1] |
| Chambers (EVG520 IS) | — | Single- or double-chamber automated system[1] |
| Cooling (EVG520 IS) | — | Integrated cooling station for high throughput; active water cooling top and bottom; integrated cooling optional[1] |
| Max contact force (EVG520 IS) | — | 10, 20, 60, 100 kN[1] |
| Heater size (EVG520 IS) | — | 150 mm, 200 mm[1] |
| Minimum substrate dimension (EVG520 IS) | — | single chips 100 mm[1] |
| Vacuum standard (EVG520 IS) | — | 1E-5 mbar[1] |
| Vacuum optional (EVG520 IS) | — | 1E-6 mbar[1] |
| Max temperature (EVG520 IS) | — | Standard: 550 °C; Optional: 650 °C[1] |
| Single chips processing (EVG520 IS) | — | Yes[1] |
| Loading chamber (EVG520 IS) | — | Manual[1] |
| Max bond chambers (EVG520 IS) | — | 2[1] |
| Anodic bonding power supply (EVG520 IS) | — | Max. voltage: 2 kV; max. current: 50 mA[1] |
| Chuck / alignment systems (EVG520 IS) | — | 150 mm heater: EVG 610, EVG 620, EVG 6200; 200 mm heater: EVG 6200, SmartView NT[1] |
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