Comparison ledger
EV Group 501 Wafer, EV Group 510 Wafer, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 501 WaferEV Group | 510 WaferEV Group |
|---|---|---|
| OEM | EV Group | EV Group |
| Category | Packaging & Bonding | Packaging & Bonding |
| Wafer size | Manual wafer load substrate bonder | Manual wafer load substrate bonder |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | EV Group 501 Wafer | EV Group 510 |
| Specifications | ||
| Wafer size | Manual wafer load substrate bonder[1] | Manual wafer load substrate bonder[3] |
| Configuration | Capable of fusion compression bonding[1] | Refurbished[3] |
| Max Bond Force | 7 kN[1] | 10 kN[3] |
| Top side heater | 550°C max. in 1°C steps[1] | 550°C max. in 1°C steps[3] |
| Bottom side heater | 550°C max. in 1°C steps[1] | 550°C max. in 1°C steps[3] |
| Temperature uniformity | ± 1,5 %[1] | ± 1,5 % Turbo pump and controller[3] |
| Wafer sizes | 2, 3, 4, 5, 6 inch (up to 150 mm)[1] | — |
| Substrate size | single chips to 200 mm[2] | — |
| Max bond force | 7 kN (source 1) or up to 20 kN (source 2)[1] | — |
| Top side heater max temperature | 550°C in 1°C steps (source 1)[1] | — |
| Bottom side heater max temperature | 550°C in 1°C steps (source 1)[1] | — |
| Maximum temperature (source 2) | up to 450°C[2] | — |
| Vacuum (standard) | 1x10-1 mbar[2] | — |
| Vacuum (optional) | 1x10-5 mbar[2] | — |
| Power supply for anodic bonding | 0-2000 V, 0-50 mA[2] | Max voltage 2 kV; max current 50 mA[5] |
| Footprint | 0.8 m2[2] | — |
| Conversion time | less than 5 minutes[2] | — |
| Control software | Windows-based[1] | Windows based control software and operation interface[3] |
| Manufacturer | — | EV Group[3] |
| Model | — | 510 Wafer[3] |
| Category | — | Packaging & Bonding[4] |
| Wafer handling | — | Manual wafer load substrate bonder[4] |
| Bonding capability | — | Fusion and thermal compression bonding[3] |
| Bond chamber | — | High-vacuum capable bond chamber[4] |
| Turbo pump and controller | — | Included[3] |
| Roughing pump | — | Included[3] |
| System chiller | — | Included[3] |
| Load/unload tool | — | Included[3] |
| System computer, monitor, and keyboard | — | Included[3] |
| Vacuum | — | Standard: 0.1 mbar; optional: 1E-5 mbar[5] |
| Max temperature | — | 550 °C[5] |
| Loading chamber | — | Manual[5] |
| Max contact force | — | 10, 20, 60 kN[5] |
| Heater size | — | 150 mm, 200 mm[5] |
| Single chips processing | — | Yes[5] |
| Active water cooling | — | For bottom side[5] |
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