Waferpedia

Comparison ledger

2100 FCversus10100

Esec 2100 FC, West Bond 10100, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
10100West Bond
OEMEsecWest Bond
CategoryPackaging & BondingPackaging & Bonding
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyEsec 2100 FCWest Bond 10100
Cited variants
  • Esec 2100 FC plus[1]
  • Esec 2100 FC hS3rd generation[2]
—
Specifications
Bonding methodFlip Chip[2]—
Bonding accuracy8 μm @3s (High Accuracy Mode)[2]—
Min. cycle time240 ms (incl. dip fluxing)[2]—
Wafer size4” to 12”[2]—
Frame size6", 8” and 12”[2]—
Die size0.2 (with small die kit) to 20 mm[2]—
Die thickness≥ 0.05 mm / ≥ 2 mils (thinner on request)[2]—
Strip dimensionsLength up to 500 mm, Width up to 125 mm (flat boats up to 137 mm)[2]—
Machine dimensions (W x D x H)1430 x 1440 x 1400 mm[2]—
WeightApprox. 1,400 kg / 3,000 lb[2]—
Wafer flip chip placement speedUp to 12000 UPH[3]—
Wafer flip chip without dipping placement speedUp to 16000 UPH[3]—
Bond force (min)0.2 N[3]—
Number of pick and place stationsSingle[4]—
Machine dimensions1430 x 1440 x 1400 mm (W x D x H)[2]—
Bond force0.2 N[3]—

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Sources (4)Every fact above is drawn from these public sources
  1. [1]micro-power.com.hkmicro-power.com.hk
  2. [2]besi.combesi.com
  3. [3]semiconductor.directorysemiconductor.directory
  4. [4]waferpedia.comwaferpedia.com