Waferpedia

Comparison ledger

Waferlase ID 200 Dryversus100 ICP Fluorine

Coherent Waferlase ID 200 Dry, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
100 ICP FluorineOxford Instruments
OEMCoherentOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyCoherent Waferlase ID 200 DryOxford Instruments 100 ICP Fluorine
Specifications
Gasno chemicals, class 4 laser[1]—
OSWindows 10[1]—
Notequality issues[1]—
Etch Gases—SF6, CF4, O2, Ar, N2, CHF3, C4F8[2]
Cryo DRIE etch rate—up to 5 µm/min[2]
Wafer size—4 inch, 6 inch, 8 inch (with clamp change)[2]

Plan your fab

Building a Etch process? Get a complete equipment list.

Open the fab equipment planner →
Sources (2)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]nanofab.utah.edunanofab.utah.edu