Comparison ledger
CEE 100, SUSS MicroTec MJB 3 350 W Mask, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 100CEE | MJB 3 350 W MaskSUSS MicroTec |
|---|---|---|
| OEM | CEE | SUSS MicroTec |
| Category | Lithography | Lithography |
| Wafer size | 6" | Wafer Equipment |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | CEE 100 | SUSS MicroTec MJB3 350W Mask |
| Cited variants |
| — |
| Specifications | ||
| Tool type | Spray Developer[1] | — |
| Accepts wafer size | up to 6" wafers[2] | — |
| Programmable programs | 10 programs[2] | — |
| Steps per program | up to 10 steps[2] | — |
| Programmable step parameters | Acceleration, Speed, Time[2] | — |
| Associated document | CEE Model 100CB Spinner.doc[2] | — |
| Wafer size | Up to 6 inches[2] | Wafer Equipment[3] |
| Programs | 10 programs each with up to 10 steps[2] | — |
| Control parameters | Acceleration, Speed, Time[2] | — |
| - Model | — | MJB3 Main System[3] |
| - Manufacturer | — | Suss MicroTec / Karl Suss[3] |
| - Max Wafer Size | — | 3" Diameter[3] |
| - Eyepieces | — | 10x[3] |
| - Objectives | — | 3.5x and 10x[3] |
| - Exposure Mode | — | Vacuum Contact, Hard & Soft[3] |
| - Exposure Resolution | — | 0.8 Microns (under optimum conditions)[3] |
| - Alignment Resolution | — | 0.25um (operator dependant)[3] |
| Wafer Sizes | — | 3 inch[4] |
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