Comparison ledger
Canon FPA 3030 i 5+ Fine Pattern, SUSS MicroTec 150 e Mask, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 150 e MaskSUSS MicroTec | |
|---|---|---|
| OEM | Canon | SUSS MicroTec |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Canon FPA | SUSS MicroTec 150 e Mask |
| Specifications | ||
| Configuration | 350 nm[1] | — |
| Make | Canon[1] | — |
| Model | FPA 3030 i 5+[1] | — |
| Type | Stepper[2] | — |
| Technology | i-line (365nm)[2] | — |
| Wafer Size | 200mm; 150mm[2] | — |
| Resolution | ≤0.35μm[2] | — |
| Numerical Aperture (NA) | 0.45 ~ 0.63[2] | — |
| Reticle Size | 6in. (0.25in. thick); optional 5in.[2] | — |
| Reduction Ratio | 5:1[2] | — |
| Field Size | 22mm x 22mm[2] | — |
| Overlay Accuracy | ≤40nm (|m|+3 )[2] | — |
| Throughput | ≥104wph (200mm); ≥120wph (150mm)[2] | — |
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