Comparison ledger
Brewer Science B2, SUSS MicroTec MJB4, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | B2Brewer Science | MJB4SUSS MicroTec |
|---|---|---|
| OEM | Brewer Science | SUSS MicroTec |
| Category | Lithography | Lithography |
| Wafer size | 100mm | 100mm |
| Process node | DUV | about 800 nm |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | i-line |
| Family | Brewer Science B2 | SUSS MicroTec MJB4 |
| Specifications | ||
| Type | Developable BARC[1] | Mask/wafer aligner[2] |
| Name in ACT-8 process list | B2 DUV42P[1] | — |
| Configured wafer size on ACT-8 | 100 mm (4") wafers[1] | — |
| Use | — | Research and development[2] |
| Wafer diameter | — | up to 4 inch (100 mm)[2] |
| Alignment mode | — | Top side alignment (TSA)[2] |
| Exposure source | — | Mercury (Hg) lamp[2] |
| Wavelengths stated | — | 365 nm, 405 nm, 436 nm[2] |
| Illumination setup | — | 20 mW/cm2 @ 365 nm (i-line filter installed)[2] |
| Alignment precision | — | about 0.5 µm[2] |
| Exposure modes | — | flood-exposure, proximity, soft contact, hard contact[2] |
| Objective magnification | — | 5x, 10x[2] |
| Special offset objectives | — | For chip alignment; minimum separation down to 10 mm[2] |
| Stage travel | — | X = ±30 mm, Y = ±30 mm, Θ = ±4°[2] |
| Substrate thickness range | — | 0.1 mm to 4.0 mm[2] |
| Contact options | — | Soft, hard, and vacuum contact[3] |
| Mask thickness | — | up to 9 mm[3] |
| Optics option | — | Universal Optics option for UV 250, UV 350 and UV 400[3] |
| Alignment optics | — | SUSS single field microscope[3] |
| Alignment method | — | Wedge Error Compensation (WEC)[3] |
| Alignment modes stated | — | Top side and infrared alignment[3] |
| Key applications | — | LED lithography, MEMS, UV-NIL[3] |
| Applications | — | Research and development[2] |
| Substrate thickness | — | 0.1 mm up to 4.0 mm[2] |
| Light source | — | Mercury (Hg) lamp[2] |
| Spectral lines | — | 365 nm, 405 nm, 436 nm[2] |
| Illumination configuration | — | i-line (filter installed), only 365 nm line absorbed[2] |
| Default illumination intensity | — | 20 mW/cm2 @ 365 nm[2] |
| Resolution | — | Minimum about 800 nm with thin PR thickness (< 1 µm)[2] |
| Alignment modes | — | Top-side alignment (TSA)[2] |
| Wedge error compensation | — | Semi-automatic procedure[2] |
| Mask holders | — | Three different holders with vacuum clamping[2] |
| Chucks | — | Three different chucks for all sizes[2] |
| Optional objectives | — | 11x offset objectives: working distance 14.1 mm; minimum separation 10 mm[2] |
| Objectives magnification | — | 5x, 10x[2] |
| XY table travel | — | X = ± 30 mm, Y = ± 30 mm, Θ = ± 4°[2] |
| Substrate handling | — | Manual, up to 100 mm diameter[2] |
| High resolution prints | — | Down to 0.5 µm[3] |
| Universal Optics option | — | UV 250, UV 350, UV 400[3] |
| Contact modes | — | Soft, hard, vacuum contact[3] |
| Alignment options | — | Top side and infrared alignment[3] |
| Optics | — | SUSS single field microscope[3] |
| Wafer size | — | up to 4 inch (100 mm) diameter[2] |
| Exposure wavelength | — | i-line (365 nm) with filter installed; also lines at 405 nm and 436 nm[2] |
| Alignment accuracy | — | about 0.5 µm[2] |
| XY table travel (X, Y, Θ) | — | X = ±30 mm, Y = ±30 mm, Θ = ±4°[2] |
| Objective magnifications | — | 5x, 10x[2] |
| Offset objectives separation | — | minimum separation is 10 mm[2] |
| Maximum mask thickness | — | up to 9 mm[3] |
| Illumination power | — | 20 mW/cm² at 365 nm (i-line)[2] |
| Resolution (minimum) | — | about 800 nm with thin PR thickness (< 1 µm)[2] |
| Resolution (printed) | — | down to 0.5 µm[3] |
| XY table movement | — | X = ±30 mm, Y = ±30 mm, Θ = ±4°[2] |
| Special offset objectives minimum separation | — | 10 mm[2] |
| Mask thickness support | — | up to 9 mm[3] |
| Wafer/substrate thickness range | — | 0.1 mm to 4.0 mm[2] |
| Substrate size | — | to 100 mm[3] |
| Wedge Error Compensation (WEC) | — | semi-automatic procedure[2] |
| Machine type | — | Mask/wafer aligner for research and development[2] |
| Default exposure intensity | — | 20 mW/cm2 @ 365 nm[2] |
| XY stage travel | — | X = ± 30 mm, Y = ± 30 mm, Θ = ± 4°[2] |
| Small wafer/chip handling | — | Special offset objectives for alignment of small wafer/chips; minimum separation is 10 mm[2] |
| Contact and alignment features | — | Wedge Error Compensation (WEC); splitfield mode; top side and infrared alignment; vacuum contact; universal optics option for UV 250, UV 350, and UV 400[3] |
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