Waferpedia

Comparison ledger

IPC 4000 Cversus100 ICP Fluorine

Branson IPC 4000 C, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
IPC 4000 CBranson
100 ICP FluorineOxford Instruments
OEMBransonOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyBranson IPC 4000 COxford Instruments 100 ICP Fluorine
Specifications
Etch Gases—SF6, CF4, O2, Ar, N2, CHF3, C4F8[1]
Cryo DRIE etch rate—up to 5 µm/min[1]
Wafer size—4 inch, 6 inch, 8 inch (with clamp change)[1]

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Sources (1)Every fact above is drawn from these public sources
  1. [1]nanofab.utah.edunanofab.utah.edu