Comparison ledger
Axcelis NV GSD HE, Axcelis VHE, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | NV GSD HEAxcelis | VHEAxcelis |
|---|---|---|
| OEM | Axcelis | Axcelis |
| Category | Ion Implantation | Ion Implantation |
| Wafer size | 8" | 8" |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Axcelis NV GSD HE | Axcelis VHE |
| Specifications | ||
| Wafer size | Wafer can be converted back to 8"[1] | 8" wafer convertible[4] |
| Configuration | Refurbished[1] | Full disk 17 wafers[4] |
| High level of safety | No stored H2, but on demand instant generation[1] | — |
| Serial number | 090084[3] | — |
| Manufacturing year | 2000[3] | — |
| Refurbishment | Refurbished[1] | — |
| Replacement | Both front and rear Cyro pumps by the OEM[1] | — |
| Upgrade | A low pressure H2 upgrade was performed[1] | — |
| System configuration | End station, disk module, final energy magnet, linac module, gas box, source[2] | — |
| Power supply | High voltage power supply[1] | — |
| Terminal power supplies | Filament, bias, arc, magnet, source magnet[1] | — |
| Vacuum pumps | Both front and rear Cryo pumps by the OEM[1] | — |
| Gas delivery | All gas box elements[1] | — |
| Ion source | Two new SAC IHC ion sources[1] | — |
| Chamber configuration | 1 Chamber, 1 Load Port[3] | — |
| Source | — | Bernas[4] |
| Extraction system | — | Triple axes[4] |
| Gases | — | Boron, Phosfine[4] |
| Max Implantation Energy | — | 5000 KeV[4] |
| Max Extraction Boltage | — | 90 KeV[4] |
| Orienter | — | Flat[4] |
| Make | — | Axcelis[4] |
| Model | — | VHE[4] |
| Wafer sizes | — | 6 inch[4] |
| Wafer convertible | — | 6 inch - 8 inch[4] |
| Full disk capacity | — | 17 wafers[4] |
| Wafer tilt | — | Included[4] |
| Max extraction voltage | — | 90 KeV[4] |
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