Comparison ledger
Axcelis GSD 200 E 2, Varian 0216 7696, E 11368072 ESC, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | GSD 200 E 2Axcelis | |
|---|---|---|
| OEM | Axcelis | Varian |
| Category | Ion Implantation | Ion Implantation |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Axcelis GSD 200 E 2 | Varian 0216 7696, E 11368072 ESC |
| Specifications | ||
| Voltage | 208 V[1] | — |
| Frequency | 50 Hz[1] | — |
| Phase | 3 Phase[1] | — |
| Type | High Current ion implanter[2] | ESC Platen ADV-S Type[4] |
| Energy | 180 KeV[2] | — |
| Wafer Size | 8 inch (200 mm)[2] | — |
| Power Requirements | 208 V, 125 A, 50 Hz, 3 Phase[1] | — |
| Vintage (listed unit 158479) | 2000[3] | — |
| Vintage (listed unit 158478) | 2004[1] | — |
| Maximum Energy | 180 keV[2] | — |
| Current | 125 A[1] | — |
| Energy Rating | 180KeV[2] | — |
| Amperage | 125 A[1] | — |
| Configuration | — | Platen ADV-S Type[4] |
| Category | — | Ion Implantation[5] |
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