Comparison ledger
Axcelis 200 PCU, Varian 350D, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 200 PCUAxcelis | 350DVarian |
|---|---|---|
| OEM | Axcelis | Varian |
| Category | Ion Implantation | Ion Implantation |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | 1986 |
| Production run | — | 1986– |
| Lifecycle | — | Discontinued |
| Lifecycle milestones | 2000 Vintage | — |
| Control system | — | — |
| Generation | — | — |
| Family | Axcelis NV GSD 200 | Varian 350D |
| Cited variants | — | |
| Specifications | ||
| P/N | SC 4840 A[3] | — |
| Frequency | 50 Hz[3] | — |
| Phase | 3 Phase[3] | — |
| Voltage | 400 V[3] | — |
| Type | — | medium current implanter[4] |
| Relationship to 300 XP | — | industry-standard predecessor platform that the 300 XP evolved from[4] |
| Usage period | — | tool of choice during the early 1980s[4] |
| Wafer sizes | — | 4 inch and 6 inch[5] |
| Implant species | — | Boron (B11 or BF2) and Phosphorus (P31)[5] |
| Energy range | — | 10 keV to 200 keV[5] |
| Dose range | — | 1E12 to 5E15 ions/cm²[5] |
| End stations | — | Independent dual end stations[4] |
| Wafer handling | — | Vertical, edge-only wafer handling[4] |
Plan your fab
Building a Ion Implantation process? Get a complete equipment list.
Open the fab equipment planner →