Comparison ledger
Axcelis 200 ACU, Veeco RF 350 Ion Beam, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 200 ACUAxcelis | RF 350 Ion BeamVeeco |
|---|---|---|
| OEM | Axcelis | Veeco |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Axcelis NV GSD 200 | Veeco RF 350 Ion Beam |
| Specifications | ||
| Configuration | Parts Machine[1] | — |
| Manufacturer | Axcelis[1] | — |
| Model | 200 ACU[1] | RF 350[6] |
| Tool type | Asher[1] | Ion Beam Etcher (IBE)[6] |
| Wafer size | 200mm[3] | — |
| Serial number | AU6A356AH[3] | — |
| Computer system | M 200 PC, M 200[4] | — |
| Part number | SC 4572 A[4] | — |
| Volts | 208[4] | — |
| Amps | 30[4] | — |
| Equipment type | Asher[1] | — |
| Wafer configuration | 8 inch[2] | — |
| Ion Source Diameter | — | 300 mm[5] |
| Ion Source Type | — | inductively coupled, filamentless RF[5] |
| Wafer Size | — | single 6" (150 mm)[5] |
| Substrate Loading | — | single-substrate loadlocked (or configurable to cassette-to-cassette)[5] |
| OEM | — | Veeco[6] |
| Category | — | Etch[7] |
| Process modes | — | Ion Beam Etching (IBE) and Reactive Ion Beam Etching (RIBE)[5] |
| Ion source type | — | inductively coupled, filamentless RF ion source[7] |
| Loading | — | single 6" wafer loading[5] |
| Applications | — | MEMS, semiconductor fabrication, and data storage[5] |
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