Waferpedia

Comparison ledger

200 ACUversusNexus IBE350

Axcelis 200 ACU, Veeco Nexus IBE350, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
200 ACUAxcelis
OEMAxcelisVeeco
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyAxcelis NV GSD 200Veeco Nexus IBE350
Specifications
ConfigurationParts Machine[1]—
ManufacturerAxcelis[1]—
Model200 ACU[1]—
Tool typeAsher[1]Broad-beam ion etcher[5]
Wafer size200mm[3]—
Serial numberAU6A356AH[3]—
Computer systemM 200 PC, M 200[4]—
Part numberSC 4572 A[4]—
Volts208[4]—
Amps30[4]—
Equipment typeAsher[1]—
Wafer configuration8 inch[2]—
Etch type—Broad-beam ion etcher[5]
Ion source—350 mm diameter Argon ion source with RF plasma generator[5]
RF plasma generator frequency—1.8 MHz[5]
RF plasma generator maximum power—2 kW[5]
Energy range—50 V to 800 V[5]
Operating pressure—10^-4 mbar[5]
Base pressure—10^-7 mbar[5]
Ion beam width—350 mm[5]
Ion optics—Three-grids collimation optics system with molybdenum electrostatic apertures[5]
Charge neutralizer—Electron-emitting neutralizer downstream from the ion optics[5]
Substrate temperature—Less than 90 °C[5]
Substrate rotation—Up to 10 rpm[5]
Substrate tilt angle—+90° to -70°[5]
Tilt angle control—±0.5°[5]
Endpoint detection—Secondary Ions Mass Spectroscopy (SIMS) system[5]
Process type—Ion beam etching (physical sputtering)[5]
RF generator frequency—1.8 MHz[5]
RF generator power—2 kW maximum[5]
Beam energy range—50 V to 800 V[5]
Substrate fixture temperature—Less than 90 °C (Veeco FlowCool)[5]
Substrate rotation speed—Up to 10 rpm[5]
Substrate tilt angle range—+90° to -70° with ±0.5° accuracy[5]
Mechanical shutter—Present downstream of grids optics[5]
RF frequency—1.8 MHz[5]
RF power—2 kW maximum[5]
Ion energy range—50 V to 800 V[5]
Ion beam diameter—350 mm[5]
Collimation optics—Three-grids collimation optics system[5]
Charge neutralization—Plasma Bridge Neutralizer downstream from the ion optics[5]
Fixture rotation speed—Up to 10 rpm[5]
Fixture tilt range—+90° to -70°[5]
Fixture tilt control—Accurate control +/-0.5°[5]
Ion source type—ICP source, 350mm diameter, RF plasma generator, 1.8MHz, 2kW maximum[5]
Grid system—Three-grids collimation optics system (molybdenum electrostatic apertures)[5]
Neutralizer type—Plasma Bridge Neutralizer (PBN)[5]
Cooling system—Veeco patented flowcool system[5]
Process gas—argon[5]
Beam collimation optics—three-grids collimation optics system[5]
Fixture tilt angle—+90° to -70°[5]
SIMS endpoint detection—included[5]

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Sources (5)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]semistarcorp.comsemistarcorp.com
  3. [3]wotol.comwotol.com
  4. [4]semistarcorp.comsemistarcorp.com
  5. [5]epfl.chepfl.ch