Waferpedia

Comparison ledger

200 ACUversusPlasmalab 100 ICP-RIE

Axcelis 200 ACU, Oxford Instruments Plasmalab 100 ICP-RIE, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
200 ACUAxcelis
Plasmalab 100 ICP-RIEOxford Instruments
OEMAxcelisOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyAxcelis NV GSD 200Oxford Instruments Plasmalab 100
Specifications
ConfigurationParts Machine[1]RF source 300 W, 13.56 MHz[5]
ManufacturerAxcelis[1]—
Model200 ACU[1]—
Tool typeAsher[1]—
Wafer size200mm[3]—
Serial numberAU6A356AH[3]—
Computer systemM 200 PC, M 200[4]—
Part numberSC 4572 A[4]—
Volts208[4]—
Amps30[4]—
Equipment typeAsher[1]—
Wafer configuration8 inch[2]—
Process gases used—H2, O2, N2, Ar, CF4, SF6, CHF3, He, CH4, HBr, Cl2 and BCl3[5]
Cryo Table w/ operating temp—-150 to 400C[5]
Substrate cooling—using liquid nitrogen (LN2)[5]
Base pressure—5E-7 Torr[5]
Main Chamber Backing Pump—Adixen ADP 122P Dry pump[5]
Main Chamber Turbo Pump—Adixen ATH 1300 Turbo[5]
Load Lock—Adixen ACP 15G Dry pump[5]

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Sources (5)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]semistarcorp.comsemistarcorp.com
  3. [3]wotol.comwotol.com
  4. [4]semistarcorp.comsemistarcorp.com
  5. [5]inventory listing