Comparison ledger
ASML Twinscan NXT 1980 Di Immersion, Nikon 1505 G 6 E, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 1505 G 6 ENikon | |
|---|---|---|
| OEM | ASML | Nikon |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | 1988– |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | ASML Twinscan NXT 1980 Di Immersion | Nikon 1505 |
| Specifications | ||
| Manufacturer | ASML[1] | — |
| Model | Twinscan NXT 1980 Di[1] | 1505 G 6 E[5] |
| Category | Lithography[2] | Stepper[5] |
| Wafer size | 12 inch[1] | — |
| Platform architecture | NXT3 immersion technology[4] | — |
| Overlay accuracy | <1.5 nm (3σ)[4] | — |
| Configuration | — | 5" reticle[5] |
| Resolution | — | 650 nm[6] |
| Numerical Aperture | — | 0.54[6] |
| Reduction | — | 5x[6] |
| Exposure Field | — | 15 x 15 mm[6] |
| Alignment Accuracy | — | 130 nm[6] |
| Wafer Size | — | 4 inch[5] |
| Light Source | — | g-line[7] |
| Introduction Year | — | 1988[6] |
| NA (Numerical Aperture) | — | 0.54[6] |
| Make | — | Nikon[5] |
| Wafer Sizes | — | 4 inch[5] |
| Exposure type | — | g-line[6] |
| NA | — | 0.54[6] |
| Exposure field | — | 9.3 x 18.8 mm[6] |
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