Comparison ledger
ASML Twinscan AT 1100, Nikon 1505 G 6 E, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Twinscan AT 1100ASML | 1505 G 6 ENikon |
|---|---|---|
| OEM | ASML | Nikon |
| Category | Lithography | Lithography |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | 1988– |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | ASML Twinscan | Nikon 1505 |
| Specifications | ||
| Configuration | 50/60 Hz[1] | 5" reticle[3] |
| Voltage | 230 V[1] | — |
| Phase | 3 Phase[1] | — |
| Light source | 193 nm ArF laser[2] | — |
| Projection optics | Carl Zeiss Star Lith 1100, numerical aperture 0.75[2] | — |
| Resolution | 100 nm[2] | 650 nm[4] |
| Overlay accuracy | <20 nm at full throughput[2] | — |
| Throughput | 93 wafers per hour for 300 mm wafers[2] | — |
| Laser repetition rate | 4 kHz[2] | — |
| Dual wafer stage | Yes[2] | — |
| Wafer sizes | 8 inch / 200 mm, 12 inch / 300 mm[1] | — |
| Power electrical | 50/60 Hz, 230 V, 400 VAC, 3 Phase[1] | — |
| Laser model | Cymer NL 7600 A[1] | — |
| Included accessories | HDD & Software[1] | — |
| Numerical Aperture | — | 0.54[4] |
| Reduction | — | 5x[4] |
| Exposure Field | — | 15 x 15 mm[4] |
| Alignment Accuracy | — | 130 nm[4] |
| Wafer Size | — | 4 inch[3] |
| Light Source | — | g-line[5] |
| Introduction Year | — | 1988[4] |
| NA (Numerical Aperture) | — | 0.54[4] |
| Make | — | Nikon[3] |
| Model | — | 1505 G 6 E[3] |
| Category | — | Stepper[3] |
| Wafer Sizes | — | 4 inch[3] |
| Exposure type | — | g-line[4] |
| NA | — | 0.54[4] |
| Exposure field | — | 9.3 x 18.8 mm[4] |
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