Comparison ledger
Applied Materials UVision SP 200 Brightfield Wafer, KLA .498 PSL Wafer, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | UVision SP 200 Brightfield WaferApplied Materials | |
|---|---|---|
| OEM | Applied Materials | KLA |
| Category | Metrology & Inspection | Metrology & Inspection |
| Wafer size | Tool scans a wafer in a meander path | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials UVision | KLA .498 PSL Wafer |
| Specifications | ||
| Phase | 3 Phase[1] | — |
| Configuration | 5 Wire[1] | NIST Traceable[3] |
| Ligth source | Laser ( 266 ג =nm)[1] | — |
| Wafer size | Tool scans a wafer in a meander path[1] | — |
| Manufacturer | Applied Materials[1] | — |
| Model | UVision SP 200[1] | — |
| Tool type | Brightfield wafer inspection tool[1] | — |
| Category | Metrology & Inspection[2] | — |
| Wafer path | Tool scans a wafer in a meander path[2] | — |
| Power | 3 Phase[1] | — |
| Frequency | 50/60 Hz[1] | — |
| Light source | Laser (266 nm)[1] | — |
| Inspection capability | Designed to inspect pattern wafers, bare wafers, and unpatterned wafers[1] | — |
| Comparison capability | Die to Die and Cell to Cell comparison capability[1] | — |
| Detection mode | Can use reflected brightfield and scattered signal (greyfield) in parallel for detection[1] | — |
| Defect detection | On pattern wafers capable of detecting defects of 25 nm with 90% capture rate[1] | — |
| NIST traceability | — | Yes[3] |
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