Comparison ledger
Applied Materials Producer SE, Lam Research Concept One 200 PECVD-TEOS, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Producer SEApplied Materials | Concept One 200 PECVD-TEOSLam Research |
|---|---|---|
| OEM | Applied Materials | Lam Research |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | 2006 Vintage · 2008 Vintage | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials Producer | Lam Research Concept One 200 |
| Specifications | ||
| Configuration | Chambers:[2] | 208 Volts AC[1] |
| Phase | 3 Phase[5] | 3 Phase[1] |
| Wafer Size | 12 inch (300mm)[2] | — |
| Process Type | PECVD (Plasma-Enhanced Chemical Vapor Deposition)[2] | — |
| Chamber Configuration (PECVD) | A: PECVD APE, B: PECVD TEOS, C: PECVD BLOK[2] | — |
| Chamber Configuration (CVD) | ACL (2CH) – two chambers[3] | — |
| Electrical Requirements | 3 Phase, 4 Wire, 50/60 Hz[5] | — |
| Vintage Year | 2006[3] | — |
| Process type | CVD[3] | — |
| Process type variant | PECVD[2] | — |
| Chamber configuration | Chamber A: PECVD APE; Chamber B: PECVD TEOS; Chamber C: PECVD BLOK[2] | — |
| Vintage | 2006, 2007, 2008[3] | — |
| Chamber types (PECVD) | APE, TEOS, BLOK[2] | — |
| Manufacturing vintage | 2006/2007[3] | — |
| Electrical | 3 phase, 4 wire, 50/60 Hz[5] | 208 Volts AC, 3 Phase, 50/60 Hz[1] |
| OEM | Applied Materials[2] | — |
| Model | Producer SE[2] | Concept One 200[1] |
| Wafer size | 12 inch[6] | — |
| Make | — | Lam / Novellus[1] |
| Process | — | PECVD-TEOS (Plasma-Enhanced Chemical Vapor Deposition - Tetraethyl Orthosilicate)[1] |
| Wafer Sizes | — | 8 inch[7] |
| Process description | — | 8" CCP/SiO, SiN[7] |
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