Comparison ledger
Applied Materials Centura MXP, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Centura MXPApplied Materials | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Applied Materials | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials Centura MXP | Oxford Instruments 100 ICP Fluorine |
| Specifications | ||
| Configuration | 3 CH[1] | — |
| Phase | 3 Phase[1] | — |
| Frequency | 50 Hz[1] | — |
| Voltage | 208 VAC[1] | — |
| Wires | Four[2] | — |
| Full Load Current | 240 A[2] | — |
| H/E 1 | 0242-02163 REV D[3] | — |
| UPS | DPWR 35611[3] | — |
| H/E (CH-B_C_D_Wall) | 0242-02163 REV D[3] | — |
| Chambers | 3 CH[1] | — |
| Robot | HP Robot[1] | — |
| Power Supply Voltage | 208 VAC[1] | — |
| Power Supply Frequency | 50 Hz[1] | — |
| Number of Wires | Four / 4 Wires[1] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[4] |
| Cryo DRIE etch rate | — | up to 5 µm/min[4] |
| Wafer size | — | 4 inch, 6 inch, 8 inch (with clamp change)[4] |
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