Comparison ledger
Applied Materials Centura II, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Centura IIApplied Materials | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Applied Materials | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials Centura | Oxford Instruments 100 ICP Fluorine |
| Cited variants |
| — |
| Specifications | ||
| Configuration | DPS + Metal[2] | — |
| OEM | Applied Materials[1] | — |
| Model | Centura II[1] | — |
| Category | Etch[1] | — |
| Wafer sizes | 6 inch[2] | — |
| Configuration / options | DPS + Metal[1] | — |
| Chamber | DPS II / DPS / Super E / eMxP+ / MxP+ / MxP / eMAX[3] | — |
| Application | Poly / Metal / Oxide etch[3] | — |
| Wafer size | 6 inch[2] | 4 inch, 6 inch, 8 inch (with clamp change)[4] |
| Chamber options | DPS II, DPS, Super E, eMxP+, MxP+, MxP, eMAX[1] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[4] |
| Cryo DRIE etch rate | — | up to 5 µm/min[4] |
Plan your fab
Building a Etch process? Get a complete equipment list.
Open the fab equipment planner →