Comparison ledger
Applied Materials Centura DPS+ Poly Silicon, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | Centura DPS+ Poly SiliconApplied Materials | 100 ICP FluorineOxford Instruments |
|---|---|---|
| OEM | Applied Materials | Oxford Instruments |
| Category | Etch | Etch |
| Wafer size | Wafer Mapping | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials Centura | Oxford Instruments 100 ICP Fluorine |
| Specifications | ||
| Configuration | Through the Wall[1] | — |
| Voltage | 208 VAC, 3 Phase, 60 Hz[1] | — |
| Full Load Current | 250 A[1] | — |
| Maximum System Rating | 90 KVA[1] | — |
| Rating of LArgest Load | 175 A[1] | — |
| Software Version | 4.8_26[1] | — |
| Wafer size | Wafer Mapping[1] | 4 inch, 6 inch, 8 inch (with clamp change)[3] |
| Load Lock Type | Narrow Body[1] | — |
| Robot Type | HP+[1] | — |
| Gas Panel Type | Seriplex[1] | — |
| System Controller | 5200 only[1] | — |
| Wafer sizes | 6 inch[1] | — |
| System configuration | Position A: DPS Plus, Position B: DPS Plus, Position D: DPS Plus, Position F: Wafer Orienter[1] | — |
| Voltage/Phase | 208 VAC, 3 Phase, 60 Hz[1] | — |
| System controller | 5200[1] | — |
| ESC type | Polyimide[1] | — |
| Upper chamber part number | 0010-13833[1] | — |
| Throttle valve part number | 0016-39645[1] | — |
| Turbo chamber positions | Alcatel STPA 2203 CV at positions A, B, D[2] | — |
| RF microwave generators | ACG-6B-02, ATLAS 2012 at positions A and B[2] | — |
| Heat exchanger | AMAT 1, quantity 2[2] | — |
| Vintage | 1997[1] | — |
| Position A | Chamber Type DPS Plus[1] | — |
| Position B | Chamber Type DPS Plus[1] | — |
| Position D | Chamber Type DPS Plus[1] | — |
| Position F | Chamber Type Wafer Orienter[1] | — |
| Throttle Valve P/N | 0016-39645[1] | — |
| OEM | Applied Materials[1] | — |
| Model | Centura DPS+[1] | — |
| Category | Etch[2] | — |
| Wafer mapping | Yes[1] | — |
| Power | 208 VAC, 3 Phase, 60 Hz[2] | — |
| Electrostatic chuck | Polyimide[1] | — |
| Through the wall | Yes[1] | — |
| All cables present | Yes[1] | — |
| Independent backside HE cool | Yes[1] | — |
| Signal lamp tower | Yes[1] | — |
| Remote service monitors | Yes[1] | — |
| Position A chamber type | DPS Plus[2] | — |
| Position B chamber type | DPS Plus[2] | — |
| Position D chamber type | DPS Plus[2] | — |
| Position F chamber type | Wafer Orienter[2] | — |
| Etch Gases | — | SF6, CF4, O2, Ar, N2, CHF3, C4F8[3] |
| Cryo DRIE etch rate | — | up to 5 µm/min[3] |
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