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Comparison ledger

Centura 5200 MXP+ SOGversus100 ICP Fluorine

Applied Materials Centura 5200 MXP+ SOG, Oxford Instruments 100 ICP Fluorine, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
Centura 5200 MXP+ SOGApplied Materials
100 ICP FluorineOxford Instruments
OEMApplied MaterialsOxford Instruments
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials Centura 5200 MXP+ SOGOxford Instruments 100 ICP Fluorine
Specifications
Wafer Size8 inch[1]—
Process TypeSOG (Spin-On Glass) Etch[1]—
Chamber ConfigurationMXP+[1]—
Vintage Year1996[1]—
Etch Gases—SF6, CF4, O2, Ar, N2, CHF3, C4F8[2]
Cryo DRIE etch rate—up to 5 µm/min[2]
Wafer size—4 inch, 6 inch, 8 inch (with clamp change)[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]Equipment inventory listing
  2. [2]nanofab.utah.edunanofab.utah.edu