Waferpedia

Comparison ledger

Centura 5200 MetalversusConcept Two Dual Sequel

Applied Materials Centura 5200 Metal, Lam Research Concept Two Dual Sequel, side by side. Every value shown is drawn from the cited encyclopedia entries.

Documented as functional equivalents— Same function class: Deposition, null[1]
Side-by-side comparison of selected equipment models
Attribute
Centura 5200 MetalApplied Materials
OEMApplied MaterialsLam Research
CategoryDepositionDeposition
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials Centura 5200Lam Research Concept Two
Specifications
ConfigurationTi/TiN MCVD[1]RPC (2)[2]
Flat Type—Semi Notched[2]
Wafer Substrate—Silicon[2]
Software Version & Build—Sequel 4.94 B 38[2]
DLVM Mfg Type—Refurb - SSEMVIT[2]
PM 2 (Left)—Sequel[2]
PM 2 (Left) Mfg Type—Refurb - SSEMVIT[2]
PM 3 (Center)—Sequel[2]
PM 3 (Center) Mfg Type—Refurb - SSEMVIT[2]
PM 4 (Right)—Blank-Off[2]
Cable Length—75 ft[2]
Wafer Cassette—Entegris FA 200-8 MT 7902[2]
Front End Option—SMIF Ready[2]
User Interface Option—SMIF Ready[2]
User Interface Options—Cleanroom (Right Side)[2]
Paddle and Arc Kits—STD[2]
Cool Station Options—4 Shelf Cool Station[2]
Particle Check Options—Particle Sensor Manifold[2]
QTY—3 Systems (Single shrink chamber and dual standard chamber)[3]
Voltage—208 V[4]
Phase—3 Phase[4]
Category—Chemical Vapor Deposition (CVD)[2]
Wafer Size—8 inch[2]
Voltage / Frequency / Phase—208 V, 50/60 Hz, 3 Phase[4]
Full Load Current—10 A[4]
Max Component Current—5 Amp[4]
Software Version—Sequel 4.94 B 38[2]
Showerhead Material—AL 6061[2]
Pressure Control—MKS[2]
Manometers—Heated[2]
Facilities Kits—Bottom[2]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]inventory listing
  3. [3]inventory listing
  4. [4]inventory listing