Waferpedia

Comparison ledger

0020 17485 PartversusConcept One 200 PECVD-TEOS

Applied Materials 0020 17485 Part, Lam Research Concept One 200 PECVD-TEOS, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0020 17485 PartApplied Materials
OEMApplied MaterialsLam Research
CategoryDepositionDeposition
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0020 17485 PartLam Research Concept One 200
Specifications
ConfigurationStrap, RF Out 2 Balanced Coil Match, Hdp[1]208 Volts AC[2]
Phase—3 Phase[2]
Make—Lam / Novellus[2]
Model—Concept One 200[2]
Process—PECVD-TEOS (Plasma-Enhanced Chemical Vapor Deposition - Tetraethyl Orthosilicate)[2]
Wafer Sizes—8 inch[3]
Process description—8" CCP/SiO, SiN[3]
Electrical—208 Volts AC, 3 Phase, 50/60 Hz[2]

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Sources (3)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]inventory listing
  3. [3]inventory listing