Comparison ledger
Applied Materials 0010 47763, Tokyo Electron TSP 305 SCCM SE+ Oxide, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010 47763Applied Materials | TSP 305 SCCM SE+ OxideTokyo Electron |
|---|---|---|
| OEM | Applied Materials | Tokyo Electron |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010 47763 | Tokyo Electron TSP 305 SCCM SE+ Oxide |
| Specifications | ||
| Configuration | 2nd Source New[1] | — |
| Type | Monopolar Dual Heated[2] | — |
| Description | ASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[3] | — |
| Possible Materials | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Model | 0010-47763[1] | — |
| OEM | Applied Materials[1] | — |
| Material (possible) | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Application | Fixing wafers in etching process (PVD, CVD, ETCH)[2] | — |
| Quantity available (source) | 1[2] | — |
| Vintage | — | 2006, 2007, 2008[4] |
| Wafer Size | — | 12"[5] |
| Carrier | — | FOUP (Comply with SEMI E47.1, 25 wafers)[5] |
| Interface | — | 5 Carrier stage (Continuous flow operation) with Semi compliant MENV and FIMS assemblies[5] |
| Process Chambers | — | 4 chambers, SCCM Oxide with Y2O3 coating[5] |
| End Point Detector | — | SE2000ii[5] |
| ESC Type | — | Ceramics ESC with STD Vpp[5] |
| Focus Ring | — | 3.4mm[5] |
| TMP | — | TMP-3403LMC-T4(VG300) (SHIMADZU)[5] |
| Dry Pump | — | ESR80WN, KEG approved[5] |
| APC | — | Pendulum Motion Dia., 320mm(VAT), R.T.~90deg[5] |
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