Waferpedia

Comparison ledger

0010 47763versusTE 8500

Applied Materials 0010 47763, Tokyo Electron TE 8500, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0010 47763Applied Materials
TE 8500Tokyo Electron
OEMApplied MaterialsTokyo Electron
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0010 47763Tokyo Electron TE 8500
Cited variants—
  • TE 8500 P Dry[1]
  • TE 8500 PESC Dry[1]
Specifications
Configuration2nd Source New[2]—
TypeMonopolar Dual Heated[3]—
DescriptionASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[4]—
Possible MaterialsAl2O3 (aluminum oxide) or AlN (aluminum nitride)[3]—
Model0010-47763[2]—
OEMApplied Materials[2]—
Material (possible)Al2O3 (aluminum oxide) or AlN (aluminum nitride)[3]—
ApplicationFixing wafers in etching process (PVD, CVD, ETCH)[3]—
Quantity available (source)1[3]—
Wafer size—6 inch[1]
Process type—Etch (Dry)[6]
Chambers (PESC Dry)—1[1]
Application (PESC Dry)—Oxide etch with endpoint capability[1]
Vintage—1994[6]

Plan your fab

Building a Etch process? Get a complete equipment list.

Open the fab equipment planner →
Sources (6)Every fact above is drawn from these public sources
  1. [1]waferpedia.comwaferpedia.com
  2. [2]inventory listing
  3. [3]saulcontrol.comsaulcontrol.com
  4. [4]getspares.comgetspares.com
  5. [5]Equipment inventory listing
  6. [6]layla-ec.comlayla-ec.com