Comparison ledger
Applied Materials 0010 47763, Tegal 981, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010 47763Applied Materials | 981Tegal |
|---|---|---|
| OEM | Applied Materials | Tegal |
| Category | Etch | Etch |
| Wafer size | — | 150mm |
| Process node | — | — |
| Introduced | — | 1999 |
| Production run | — | 1999– |
| Lifecycle | — | Legacy |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010 47763 | Tegal 981 |
| Cited variants | — |
|
| Specifications | ||
| Configuration | 2nd Source New[2] | — |
| Type | Monopolar Dual Heated[3] | — |
| Description | ASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[4] | — |
| Possible Materials | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[3] | — |
| Model | 0010-47763[2] | — |
| OEM | Applied Materials[2] | — |
| Material (possible) | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[3] | — |
| Application | Fixing wafers in etching process (PVD, CVD, ETCH)[3] | — |
| Quantity available (source) | 1[3] | — |
| process type | — | plasma etch system[5] |
| application focus | — | thin film head fabrication[6] |
| etch result | — | precise photoresist descum[5] |
| anisotropy | — | 4:1[5] |
| processing temperature | — | low processing temperatures[5] |
| plasma chemistry | — | oxygen-free plasmas[5] |
| wafer size variant | — | 150mm–200mm[1] |
| Status | — | In Storage 8"[7] |
| Process type | — | plasma etch[5] |
| Primary function | — | precise photoresist descum[5] |
| Variant designation | — | 981 ACS[1] |
| Variant wafer size | — | 150mm–200mm[1] |
| Variant application | — | non-critical silicon nitride and photoresist trim processing[1] |
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