Comparison ledger
Applied Materials 0010 47763, Lam Research AutoEtch 590, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010 47763Applied Materials | AutoEtch 590Lam Research |
|---|---|---|
| OEM | Applied Materials | Lam Research |
| Category | Etch | Etch |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010 47763 | Lam Research AutoEtch 590 |
| Specifications | ||
| Configuration | 2nd Source New[1] | Cassette-to-cassette automatic plasma etching platform[4] |
| Type | Monopolar Dual Heated[2] | — |
| Description | ASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[3] | — |
| Possible Materials | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Model | 0010-47763[1] | AutoEtch 590[5] |
| OEM | Applied Materials[1] | Lam Research[5] |
| Material (possible) | Al2O3 (aluminum oxide) or AlN (aluminum nitride)[2] | — |
| Application | Fixing wafers in etching process (PVD, CVD, ETCH)[2] | — |
| Quantity available (source) | 1[2] | — |
| Chamber structure | — | Double airlock chamber structure[4] |
| Plasma configuration | — | Parallel plate plasma etching configuration[4] |
| Wafer handling | — | Automatic cassette-to-cassette wafer handling; single wafer plasma etch processing platform[4] |
| Control system | — | Upgraded Allwin21 PC controller and touchscreen monitor[4] |
| Programmable parameters | — | RF power, chamber pressure, gas flow control, electrode spacing, multi-step process recipes[4] |
| Equipment type | — | Etcher[5] |
| Wafer size | — | 4"~6"[4] |
| Process platform | — | Single wafer plasma etch processing platform[4] |
| Control interface | — | Allwin21 upgraded PC controller and industrial touchscreen monitor interface[4] |
| Process parameters | — | Programmable RF power, chamber pressure, gas flow control, electrode spacing, and multi-step process recipes[4] |
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