Waferpedia

Comparison ledger

0010 47763versus2300 V 2 Kiyo 45

Applied Materials 0010 47763, Lam Research 2300 V 2 Kiyo 45, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0010 47763Applied Materials
2300 V 2 Kiyo 45Lam Research
OEMApplied MaterialsLam Research
CategoryEtchEtch
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0010 47763Lam Research 2300
Cited variants—
  • Lam 2300 V 2 Kiyo 45 Etcher - Polysilicon - 4ch - SiCl4 / BCl3 / HBr / CH4 / CHF3 / Cl2 / CH2F2 / CH3F / NF3 / O2 / CF4 / He / Ar / N2 - Edwards STP XA2703CV 2008 Vintage[1]
  • Lam 2300 V 2 Kiyo 45 Etcher - Polysilicon - 4ch - SiCl4 / BCl3 / HBr / CH4 / CHF3 / Cl2 / CH2F2 / CH3F / NF3 / O2 / CF4 / He / Ar / N2 - Edwards STP XA2703CV 2007 Vintage[2]
  • Lam 2300 V 2 Kiyo 45 Etcher - Polysilicon - 4ch - SiCl4 / BCl3 / HBr / CH4 / CHF3 / Cl2 / CH2F2 / CH3F / NF3 / O2 / CF4 / He / Ar / N2 - Edwards STP XA2703CV 2009 Vintage[3]
  • Lam 2300 V 2 Kiyo 45 Etcher[2]
Specifications
Configuration2nd Source New[4]Polysilicon[1]
TypeMonopolar Dual Heated[5]—
DescriptionASSY, ESC, BONDED, MONOPOLAR DUAL HEATED[6]—
Possible MaterialsAl2O3 (aluminum oxide) or AlN (aluminum nitride)[5]—
Model0010-47763[4]2300 V 2 Kiyo 45[7]
OEMApplied Materials[4]—
Material (possible)Al2O3 (aluminum oxide) or AlN (aluminum nitride)[5]—
ApplicationFixing wafers in etching process (PVD, CVD, ETCH)[5]—
Quantity available (source)1[5]—
Process capability—Polysilicon[1]
Chamber configuration—4ch (4-channel)[1]
Process gases—SiCl4, BCl3, HBr, CH4, CHF3, Cl2, CH2F2, CH3F, NF3, O2, CF4, He, Ar, N2[1]
Vacuum pump—Edwards STP XA2703CV[1]
Make—Lam[7]
Category—Etcher[7]
Process—Polysilicon etching[1]
Number of Chambers—4ch[1]
Gas Chemistry—SiCl4 / BCl3 / HBr / CH4 / CHF3 / Cl2 / CH2F2 / CH3F / NF3 / O2 / CF4 / He / Ar / N2[1]
Pump—Edwards STP XA2703CV[1]
Number of chambers—4[1]
Process chambers—4[1]
Process Type—Polysilicon[1]
Chamber Count—4[1]
Supported Gases—SiCl4 / BCl3 / HBr / CH4 / CHF3 / Cl2 / CH2F2 / CH3F / NF3 / O2 / CF4 / He / Ar / N2[1]
Vintage (some units)—2007, 2008, 2009[2]

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Sources (7)Every fact above is drawn from these public sources
  1. [1]Equipment inventory listing
  2. [2]Equipment inventory listing
  3. [3]Equipment inventory listing
  4. [4]inventory listing
  5. [5]saulcontrol.comsaulcontrol.com
  6. [6]getspares.comgetspares.com
  7. [7]Equipment inventory listing