Waferpedia

Comparison ledger

0010-47763 ASSY ESC Bonded Monopolar Dual Heatedversus501 Wafer

Applied Materials 0010-47763 ASSY ESC Bonded Monopolar Dual Heated, EV Group 501 Wafer, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
501 WaferEV Group
OEMApplied MaterialsEV Group
CategoryPackaging & BondingPackaging & Bonding
Wafer size—Manual wafer load substrate bonder
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0010-47763 ASSY ESC Bonded Monopolar Dual HeatedEV Group 501 Wafer
Specifications
ConfigurationRefurbished[1]Capable of fusion compression bonding[2]
Wafer size—Manual wafer load substrate bonder[2]
Max Bond Force—7 kN[2]
Top side heater—550°C max. in 1°C steps[2]
Bottom side heater—550°C max. in 1°C steps[2]
Temperature uniformity—± 1,5 %[2]
Wafer sizes—2, 3, 4, 5, 6 inch (up to 150 mm)[2]
Substrate size—single chips to 200 mm[3]
Max bond force—7 kN (source 1) or up to 20 kN (source 2)[2]
Top side heater max temperature—550°C in 1°C steps (source 1)[2]
Bottom side heater max temperature—550°C in 1°C steps (source 1)[2]
Maximum temperature (source 2)—up to 450°C[3]
Vacuum (standard)—1x10-1 mbar[3]
Vacuum (optional)—1x10-5 mbar[3]
Power supply for anodic bonding—0-2000 V, 0-50 mA[3]
Footprint—0.8 m2[3]
Conversion time—less than 5 minutes[3]
Control software—Windows-based[2]

Plan your fab

Building a Packaging & Bonding process? Get a complete equipment list.

Open the fab equipment planner →
Sources (3)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]inventory listing
  3. [3]aggiefab.tamu.eduaggiefab.tamu.edu