Comparison ledger
Applied Materials 0010-22161 High EFF RF Match, STS 320 PC, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-22161 High EFF RF MatchApplied Materials | 320 PCSTS |
|---|---|---|
| OEM | Applied Materials | STS |
| Category | — | — |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-22161 High EFF RF Match | STS 320 PC |
| Specifications | ||
| Make | Applied Materials[1] | — |
| Model | 0010-22161[1] | — |
| Description | HTESC PH 1 REV A[2] | — |
| Condition | Used[2] | — |
| Stock Number | BM6628[2] | — |
| Type | — | Fully automatic computer controlled reactive ion etching system[3] |
| End point detection | — | Included[3] |
| Cathode diameter | — | 30 cm[3] |
| Cathode area | — | 706.5 cm2[3] |
| RF forward power range | — | 10 to 600 watts[3] |
| Chamber max pressure | — | 500 mTorr[3] |
| Substrate sizes | — | 2 to 8 inch and small fragments[3] |
| Process gases | — | SF6, CHF3, C3F8, He, CF4, O2, and N2[3] |