Comparison ledger
Applied Materials 0010-22161 High EFF RF Match, Lam Research Gasonics L 3510 Asher / Stripper, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-22161 High EFF RF MatchApplied Materials | Gasonics L 3510 Asher / StripperLam Research |
|---|---|---|
| OEM | Applied Materials | Lam Research |
| Category | — | — |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-22161 High EFF RF Match | Lam Research Gasonics L 3510 Asher / Stripper |
| Specifications | ||
| Make | Applied Materials[1] | — |
| Model | 0010-22161[1] | — |
| Description | HTESC PH 1 REV A[2] | — |
| Condition | Used[2] | — |
| Stock Number | BM6628[2] | — |
| Microwave Power | — | 0–1200 W at 2.45 GHz[3] |
| Pressure Range | — | 0.5 to >5.0 torr[3] |
| Platen Temperature | — | 100–300°C[3] |
| Ash Rate | — | Up to 3.5 µm/min[3] |
| Throughput | — | 45–60 WPH[3] |
| Within Wafer Uniformity | — | ±5% to 10%[3] |
| Wafer-to-Wafer Uniformity | — | ±5% to 10%[3] |
| Process Gas | — | O2, N2[3] |
| Wafer Size Support | — | 75 mm to 200 mm (3 to 8 inch)[4] |
| Process Type | — | Downstream microwave plasma ashing[4] |
| Endpint Detection | — | Yes, typical[4] |
| Heating | — | Platen and lampe heating[3] |