Comparison ledger
Applied Materials 0010-22161 High EFF RF Match, Lam Research Gasonics L 3510, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-22161 High EFF RF MatchApplied Materials | Gasonics L 3510Lam Research |
|---|---|---|
| OEM | Applied Materials | Lam Research |
| Category | — | — |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-22161 High EFF RF Match | Lam Research Gasonics |
| Specifications | ||
| Make | Applied Materials[1] | — |
| Model | 0010-22161[1] | L 3510[3] |
| Description | HTESC PH 1 REV A[2] | — |
| Condition | Used[2] | — |
| Stock Number | BM6628[2] | — |
| Configuration | — | With:[3] |
| Microwave Power | — | 0–1200 watts at 2.45 GHz[4] |
| Pressure Range | — | 0.5 to >5.0 torr[4] |
| Platen Temperature | — | 100–300 °C[4] |
| Ash Rate | — | Up to 3.5 µm/min (process dependent)[4] |
| Throughput | — | 45–60 wafers per hour[4] |
| Within Wafer Uniformity | — | ±5% to 10% (process dependent)[4] |
| Wafer-to-Wafer Uniformity | — | ±5% to 10% (process dependent)[4] |
| Process Gases | — | O₂, N₂ (O₂ 5 SLM, N₂ 1 SLM typical)[4] |
| Wafer Size | — | 75 mm to 200 mm (3 to 8 inch)[5] |
| OEM | — | Lam Research / Gasonics[3] |
| Type | — | Plasma asher[3] |
| Process type | — | Downstream microwave plasma ashing[5] |
| Wafer size support | — | 75 mm to 200 mm (3 to 8 inch); up to 8 inch capability[5] |
| Wafer handling | — | Z-Bot for 6" and 8" wafers[3] |
| Gas delivery | — | Accurate 354 C Gas Control System[3] |
| Vacuum pump | — | Abara A 70 W Dry Pump[3] |
| Process gases | — | O2, N2[5] |
| Ash rate | — | Up to 3.5 µm/min[5] |
| Wafer transfer | — | Integrated solid robotic wafer transfer[4] |
| Cassette station | — | Fixed, more stable[4] |
| Controller | — | Allwin21 PC with touch screen monitor[4] |