Comparison ledger
Applied Materials 0010-22161 High EFF RF Match, KLA Zeta 20, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-22161 High EFF RF MatchApplied Materials | Zeta 20KLA |
|---|---|---|
| OEM | Applied Materials | KLA |
| Category | — | — |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-22161 High EFF RF Match | KLA Zeta 20 |
| Specifications | ||
| Make | Applied Materials[1] | — |
| Model | 0010-22161[1] | — |
| Description | HTESC PH 1 REV A[2] | — |
| Condition | Used[2] | — |
| Stock Number | BM6628[2] | — |
| Type | — | Fully integrated optical profiling microscope[3] |
| Measurement capability | — | 3D metrology and imaging[3] |
| Operating mode | — | Non-contact 3D microscope and surface topography measurement system[3] |
| Technology | — | ZDot technology[3] |
| Optics | — | Multi-Mode optics[3] |
| Measurement techniques | — | White light interferometry, phase shifting interferometry, Nomarski interference contrast microscopy, shearing interferometry, and broadband reflectometry[3] |
| Film thickness measurement | — | Transparent film thickness measurement[3] |
| Applications | — | Sample review and automated defect inspection[3] |
| Environment | — | Supports both R&D and production environments[3] |
| Measurement range | — | Step heights from nanometers to millimeters[4] |
| Surface characterization | — | Surface roughness measurement for smooth and rough surfaces[4] |
| Objective lenses | — | Objective lenses up to 50x[5] |
| Software functions | — | Sample mapping, image stitching, and automated feature detection[5] |
| Sample load mode | — | Manual sample load[4] |
| Tool type | — | Fully integrated optical profiling microscope[3] |
| Metrology capability | — | 3D metrology and imaging[5] |
| Measurement technology | — | ZDot technology[3] |
| Measurement mode | — | White light interferometry[3] |
| Additional measurement techniques | — | Confocal microscopy, vertical scanning interferometry, phase shifting interferometry, thin film reflectometry, and differential interference contrast imaging[5] |
| Operating environments | — | R&D and production environments[3] |
| Film thickness range | — | Transparent film thickness from 30nm to 100µm[3] |
| Defect inspection capability | — | Capture defects greater than 1µm[3] |
| Wafer handling | — | Manual sample load[4] |
| Maximum objective lens | — | Up to 50x[5] |
| Intro year | — | 2007[6] |