Comparison ledger
Applied Materials 0010-21246 Part, Lam Research TCP 9600 SE, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-21246 PartApplied Materials | TCP 9600 SELam Research |
|---|---|---|
| OEM | Applied Materials | Lam Research |
| Category | — | — |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | — | Lam Research TCP 9600 SE |
| Cited variants | — |
|
| Specifications | ||
| Process type | — | Metal etch (Al, TiW)[2] |
| Wafer sizes | — | 6 inch, 8 inch[1] |
| Substrate size | — | 150 mm diameter[2] |
| Plasma source | — | Transformer-coupled plasma (TCP) coil[1] |
| Process gases | — | Cl2, BCl3, HBr, SF6, CF4, Ar, N2, O2, He[2] |
| Process pressure | — | 0-100 mTorr[2] |
| Top electrode power | — | 0 – 1250W[2] |
| Lower electrode power | — | 0 – 1200W[2] |
| Process temperature | — | 55°C[2] |
| Endpoint detection | — | Adjustable monochromator[2] |
| Strip module | — | Decoupled source quartz (DSQ) strip module[2] |
| Al etch rate (recipe 600/601) | — | 800 nm/min[2] |
| Photoresist etch rate (recipe 600/601) | — | 400 nm/min[2] |
| Al2O3 etch rate (recipe 640) | — | 100-120 nm/min[2] |
| Electrical requirements | — | 208V/80A[1] |
| Chiller electrical requirements | — | 200/208VAC / 25A[1] |
| Software | — | Lam Envision[1] |
| Software version | — | E 1.5.2[1] |
| Wafer clamp | — | ESC (Electrostatic Chuck)[1] |
| Backside helium cooling | — | Yes[1] |