Comparison ledger
Applied Materials 0010-13622 RF Match for, Oxford Instruments 100, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-13622 RF Match forApplied Materials | 100Oxford Instruments |
|---|---|---|
| OEM | Applied Materials | Oxford Instruments |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-13622 RF Match for | Oxford Instruments 100 |
| Specifications | ||
| Configuration | High Efficiency HE RF Match-Bias[1] | — |
| Model | 0010-13622[1] | — |
| Product Type | RF Match for PVD (Physical Vapor Deposition)[1] | — |
| Feature | High Efficiency HE RF Match-Bias[1] | — |
| Process type | — | Plasma-Enhanced Chemical Vapor Deposition (PECVD)[2] |
| Electrode configuration | — | Top electrode RF driven (MHz and/or kHz); no RF bias on lower (substrate) electrode[3] |
| Substrate placement | — | Substrate sits directly on heated electrode[3] |
| Gas injection | — | Via showerhead gas inlet in top electrode[3] |
| Film stress control | — | By high/low frequency mixing techniques[3] |
| Temperature range | — | 400 °C to 1200 °C (resistive heated electrodes)[3] |
| Wafer size compatibility | — | Up to 200 mm[3] |
| Chamber cleaning | — | In-situ plasma cleaning with end-point control[3] |
| Deposition uniformity | — | Excellent uniformity and high rate films[3] |
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