Comparison ledger
Applied Materials 0010-13622 RF Match for, Applied Materials Producer SE, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-13622 RF Match forApplied Materials | Producer SEApplied Materials |
|---|---|---|
| OEM | Applied Materials | Applied Materials |
| Category | Deposition | Deposition |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | 2006 Vintage · 2008 Vintage |
| Control system | — | — |
| Generation | — | — |
| Family | Applied Materials 0010-13622 RF Match for | Applied Materials Producer |
| Specifications | ||
| Configuration | High Efficiency HE RF Match-Bias[1] | Chambers:[2] |
| Model | 0010-13622[1] | Producer SE[2] |
| Product Type | RF Match for PVD (Physical Vapor Deposition)[1] | — |
| Feature | High Efficiency HE RF Match-Bias[1] | — |
| Phase | — | 3 Phase[5] |
| Wafer Size | — | 12 inch (300mm)[2] |
| Process Type | — | PECVD (Plasma-Enhanced Chemical Vapor Deposition)[2] |
| Chamber Configuration (PECVD) | — | A: PECVD APE, B: PECVD TEOS, C: PECVD BLOK[2] |
| Chamber Configuration (CVD) | — | ACL (2CH) – two chambers[3] |
| Electrical Requirements | — | 3 Phase, 4 Wire, 50/60 Hz[5] |
| Vintage Year | — | 2006[3] |
| Process type | — | CVD[3] |
| Process type variant | — | PECVD[2] |
| Chamber configuration | — | Chamber A: PECVD APE; Chamber B: PECVD TEOS; Chamber C: PECVD BLOK[2] |
| Vintage | — | 2006, 2007, 2008[3] |
| Chamber types (PECVD) | — | APE, TEOS, BLOK[2] |
| Manufacturing vintage | — | 2006/2007[3] |
| Electrical | — | 3 phase, 4 wire, 50/60 Hz[5] |
| OEM | — | Applied Materials[2] |
| Wafer size | — | 12 inch[6] |
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