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0010-13622 RF Match forversusCentura Ultima TE HDP

Applied Materials 0010-13622 RF Match for, Applied Materials Centura Ultima TE HDP, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0010-13622 RF Match forApplied Materials
Centura Ultima TE HDPApplied Materials
OEMApplied MaterialsApplied Materials
CategoryDepositionDeposition
Wafer size—(1) Wafer Orienter Chamber
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0010-13622 RF Match forApplied Materials Centura Ultima TE HDP
Specifications
ConfigurationHigh Efficiency HE RF Match-Bias[1]—
Model0010-13622[1]Centura Ultima TE HDP[2]
Product TypeRF Match for PVD (Physical Vapor Deposition)[1]—
FeatureHigh Efficiency HE RF Match-Bias[1]—
Voltage—208 Vac[2]
Phase—3 Phase[2]
Frequency—60 Hz[2]
Wafer size—(1) Wafer Orienter Chamber[2]
Manufacturer—Applied Materials[2]
Process—HDP CVD (Chemical Vapor Deposition)[2]
Chamber configuration—1 Ultima TE Chamber, 2 DxZ Nitride Chambers, 1 Wafer Orienter Chamber, 1 Multi-Slot Cooldown Chamber[2]
Electrical requirements—208 Vac, 3 Phase, 4 Wires, 60 Hz[2]
Vintage—2004[2]

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Sources (2)Every fact above is drawn from these public sources
  1. [1]inventory listing
  2. [2]inventory listing