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Comparison ledger

0010-13622 RF Match forversusCentura 5200

Applied Materials 0010-13622 RF Match for, Applied Materials Centura 5200, side by side. Every value shown is drawn from the cited encyclopedia entries.

Side-by-side comparison of selected equipment models
Attribute
0010-13622 RF Match forApplied Materials
Centura 5200Applied Materials
OEMApplied MaterialsApplied Materials
CategoryDepositionDeposition
Wafer size——
Process node——
Introduced——
Production run——
Lifecycle——
Lifecycle milestones——
Control system——
Generation——
FamilyApplied Materials 0010-13622 RF Match forApplied Materials Centura 5200
Cited variants—
  • Centura 5200 PECVD[1]
  • Centura 5200 CVD[2]
Specifications
ConfigurationHigh Efficiency HE RF Match-Bias[3]Mainframe[4]
Model0010-13622[3]—
Product TypeRF Match for PVD (Physical Vapor Deposition)[3]—
FeatureHigh Efficiency HE RF Match-Bias[3]—
Gas boxes—2 populated out of 4 available[4]
Process chamber—5200 WxZ CVD[4]
Light Tower—Four Color Tower[1]
Loadlock Type—Narrow Body - Auto Tiltout[1]
Buffer Robot—Single Blade HP+[1]
Gas Panel Type—Seriplex[1]
Chamber Process Type—WxZ[1]
Chamber Clean Process—RF Plasma[1]
Backside Pressure Control—MKS 1170 Argon 2SLM[1]
Lid Assembly—Enhanced Cooled Lid[1]
Heater Type—AL W/Ceramic Purge Ring[1]
Wafer size (PECVD configuration)—8 inch[1]
Buffer chamber pump—Ebara A 10 W[1]
Backing pump (Chamber A & B)—Ebara A 70 W WXZ[1]
Loadlocks backing pump—Ebara A 10 W[1]

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Sources (4)Every fact above is drawn from these public sources
  1. [1]Equipment inventory listing
  2. [2]Equipment inventory listing
  3. [3]inventory listing
  4. [4]inventory listing