Comparison ledger
Applied Materials 0010-03254 E Chuck, Canon MPA 600 FA, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | 0010-03254 E ChuckApplied Materials | MPA 600 FACanon |
|---|---|---|
| OEM | Applied Materials | Canon |
| Category | — | — |
| Wafer size | — | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | — | Canon MPA 600 |
| Specifications | ||
| Configuration | — | Upgraded to 150 mm compatibility[1] |
| Type | — | 1X mirror projection auto feeder / mask aligner[2] |
| Auto feeder | — | Single or double, cassette to cassette, backside wafer handling[2] |
| Wafer sizes | — | 4 inch, 5 inch, 6 inch[2] |
| Mask sizes | — | 5 inch, 6 inch, 7 inch[2] |
| Resolution | — | 1.5 um (using positive resist)[2] |
| Illumination | — | 2 kW high pressure mercury lamp[2] |
| Wavelengths used | — | 365 nm (i-line), 405 nm (h-line), 436 nm (g-line)[2] |
| Intensity | — | At 1800 watts power output: 4 inch wafer more than 700 mW, 5 inch wafer more than 650 mW, 6 inch wafer more than 600 mW[2] |
| Intensity / exposure uniformity | — | Within plus/minus 3%[2] |
| Constant temperature control | — | Monitors and controls system temperature within plus/minus 0.3 degrees C[2] |
| Distortion control | — | PDC matic distortion control[2] |
| Automatic alignment | — | HeNe 633 nm laser beam scanning alignment[2] |
| Alignment modes | — | Spot beam / sheet beam[2] |
| Alignment accuracy | — | 3sigma <= 0.54 um[2] |
| Required facilities | — | 200 VAC, 3Phase, 6 kVA, 50/60Hz; Air Supply(CTC): 200 VAC, 3Phase, 8 kVA, 50/60Hz; CDA pressure minimum 6.5 kg/cm2, flow rate 130 lit/min; Vacuum 50 cmHg or more; Exhaust flow for illuminator 6.5 m/sec to 9.5 m/sec[2] |
| Compatibility upgrade | — | Upgraded to 150 mm compatibility[3] |
| Monitor | — | Monitor not included[3] |
| Vintage | — | 1991 vintage[3] |
| Wafer handling | — | Single or double, cassette to cassette, backside wafer handling[3] |
| Tool type | — | 1X mirror projection mask aligner[3] |
| Temperature control | — | Monitors and controls system temperature within plus/minus 0.3 degrees C[3] |
| Power / electrical | — | 200 VAC, 3Phase, 6 kVA, 50/60Hz[3] |
| Air supply (CTC) | — | 200 VAC, 3Phase, 8 kVA, 50/60Hz[3] |
| CDA pressure | — | Minimum 6.5 kg/cm2, flow rate 130 lit/min[3] |
| Vacuum | — | 50 cmHg or more[3] |
| Exhaust flow for illuminator | — | 6.5 m/sec to 9.5 m/sec[3] |