Comparison ledger
AJA ATC Orion, Applied Materials 0010-13622 RF Match for, side by side. Every value shown is drawn from the cited encyclopedia entries.
| Attribute | ATC OrionAJA | 0010-13622 RF Match forApplied Materials |
|---|---|---|
| OEM | AJA | Applied Materials |
| Category | Deposition | Deposition |
| Wafer size | 6 in | — |
| Process node | — | — |
| Introduced | — | — |
| Production run | — | — |
| Lifecycle | — | — |
| Lifecycle milestones | — | — |
| Control system | — | — |
| Generation | — | — |
| Family | AJA ATC Orion | Applied Materials 0010-13622 RF Match for |
| Specifications | ||
| Tool type | Physical vapor deposition (PVD) tool[1] | — |
| Deposition method | Magnetron sputtering[1] | — |
| Magnetron sputtering sources | Stiletto (HV) magnetron sputtering source; A330-XP-O (UHV) magnetron sputtering source[1] | — |
| Vacuum load lock | Turbo-pumped vacuum load lock with 6-position cassette[1] | — |
| Substrate size | Up to 6 in[1] | — |
| Reactive sputtering gases | Oxygen and nitrogen[1] | — |
| Power sources | DC and RF generators[1] | — |
| Sputter source capacity | Up to 5 3 in sputter sources[1] | — |
| Options | RF bias option[1] | — |
| Control system | Phase II-J Computer Control System[1] | — |
| Number of sputter sources | Up to 5 x 3 inch[1] | — |
| Sputter source types | Stiletto (HV) magnetron sputtering source; A330-XP-O (UHV) magnetron sputtering source[1] | — |
| Load lock | Turbo-pumped vacuum load lock with 6 position cassette[1] | — |
| Reactive sputtering | Capable of reactive sputtering with oxygen and nitrogen[1] | — |
| Generators | DC and RF generators[1] | — |
| RF bias option | Available[1] | — |
| Computer control system | Phase II-J Computer Control System[1] | — |
| Deposition technique | Magnetron sputtering (DC and RF)[1] | — |
| Reactive gases | Oxygen and nitrogen (also argon)[1] | — |
| Magnetron sources | Stiletto (HV) and A330-XP-O (UHV)[1] | — |
| Number of magnetron cathodes (twin chamber) | Four per deposition chamber[2] | — |
| Substrate heating (twin chamber) | Quartz lamp up to 800°C[2] | — |
| Substrate heating (single chamber) | Quartz halogen lamp, RT – 850°C[3] | — |
| Base pressure (twin chamber) | < 3x10^-7 Torr[2] | — |
| Pumping (twin chamber) | 800 L/s turbomolecular pump on each chamber[2] | — |
| Configuration | — | High Efficiency HE RF Match-Bias[4] |
| Model | — | 0010-13622[4] |
| Product Type | — | RF Match for PVD (Physical Vapor Deposition)[4] |
| Feature | — | High Efficiency HE RF Match-Bias[4] |
Plan your fab
Building a Deposition process? Get a complete equipment list.
Open the fab equipment planner →